S8836B Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
S8836B
FEATURES
„ HIGH POWER
P1dB= 29.5 dBm at 8 GHz
„ SUITABLE FOR C-BAND AMPLIFIER
„ HIGH GAIN
G1dB= 7.5 dB at 8 GHz
„ ION IMPLANTATION
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
SYMBOL
P1dB
G1dB
IDS
ηadd
CONDITION
VDS= 10V
f = 8 GHz
UNIT MIN. TYP. MAX.
dBm 28.5 29.5 
dB 6.5 7.5 
A
 0.25 0.4
%
 30 
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITION
gm VDS= 3V
IDS= 0.28A
VGSoff VDS= 3V
IDS= 5mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -10µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  170 
V -2.0 -3.5 -5.0
A
 0.55 0.7
V
-5


°C/W  20 30
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Revised Aug. 2000