S6A13 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Thyristor Silicon Planar Type

TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
S6A13
Unit: mm
· FWD included between cathode and anode
· Critical rate of rise of ON-state current: di/dt = 750 A/µs
· Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs)
· Repetitive peak OFF-state voltage: VDRM = 800 V
· Gate trigger current: IGT = 30 mA max.
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Repetitive peak OFF-state voltage
Repetitive peak surge ON-state
current
(Note)
Repetitive peak surge forward current
(Note)
Critical rate of rise of ON-state current
(Note)
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
V_DRM
I_TRM
I_FRM
di/dt
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
800
500
500
750
5
0.5
10
-5
2
-40~125
-40~150
V
A
A
A/ms
W
W
V
V
A
°C
°C
Note: V_D ^<= 0.8 ´ rated, Tc = 85°C, i_gp ^>= 60 mA, t_gw ^>= 10 ms, t_gr ^<= 150 ns
Marking
JEDEC
―
JEITA
―
TOSHIBA
13-10J1B
Weight: 1.5 g (typ.)
※1
※2
※1
MARK
S6A13
TYPE NAME
S6A13
Lot Number
※2
Month (starting from alphabet A)
Year (last decimal digit of the current year)
1
2002-01-23