S6785G Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE

TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
S6785G
HIGH SPEED SWITCHING AND CONTROL
APPLICATIONS
S6785G
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−State Voltage
and Repetitive Peak Reverse Voltage
Non−Repetitive Peak Reverse
Voltage (Non−Repetitive <5ms,
T_j = 0~125°C)
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
RATING
400
500
3
4.7
60 (50Hz)
66 (60Hz)
18
5
0.5
10
−6
2
−40~125
−40~125
UNIT
V
V
A
A
A
A²s
W
W
V
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
―
―
13−10H1B
1
2001-07-10