S6370 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – LOW POWER SWITCHING APPLICATIONS (STROBE TRIGGER)

TOSHIBA THYRISTOR SILICON PLANAR TYPE
S6370
LOW POWER SWITCHING APPLICATIONS
(STROBE TRIGGER)
S6370
Unit in mm
l Repetitive Peak Off-State Voltage : VDRM = 400V
l Repetitive Peak Reverse Voltage : VRRM = 400V
l Fast Turn On Time
: tgt = 1.5µs
l Plastic Mold Package (TO−92)
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−State Voltage
and Repetitive Peak Reverse Voltage
(R_GK=1kW)
Non−Repetitive Peak Reverse
Voltage (Non−rep<5ms, R_GK=1kΩ,
T_j=0~125°C)
Average On−State Current
(Half Sine Waveform Ta=45°C)
R.M.S. On−State Current
Peak One Cycle Surge On-State
Current (Non-Repetitive)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
P_GM
P_{G (AV)}
V_RGM
I_GM
T_j
T_stg
RATING
400
450
300
450
9 (50Hz)
9.9 (60Hz)
0.1
0.01
−5
125
−40~125
−40~125
UNIT
V
V
mA
mW
A
W
W
V
mA
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight : 0.2 g
TO−92
SC−43
13−5A1A
Note : Use with gate resistance by all means
000707EAA2
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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
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equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
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