S5295B Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Speed Rectifier Applications (fast recovery)

S5295B,S5295G,S5295J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
S5295B, S5295G, S5295J
High Speed Rectifier Applications (fast recovery)
Unit: mm
· Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C)
· Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
· Reverse Recovery Time: 1.5 µs
· Plastic Mold Type.
Maximum Ratings
Characteristics
Repetitive peak
reverse voltage
S5295B
S5295G
S5295J
Reverse voltage
(DC)
S5295B
S5295G
S5295J
Average forward current (Ta = 50°C)
Peak one cycle surge forward current
(non repetitive)
Junction temparature
Storage temparature range
Symbol
V_RRM
V_R
I_{F (AV)}
I_FSM
T_j
T_stg
Rating
Unit
100
400
V
600
75
300
V
500
0.5
A
30 (50 Hz)
A
33 (60 Hz)
-40 to 125
°C
-40 to 125
°C
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery voltage
V_FM
I_FM = 1.0 A
¾
¾
1.5
V
I_RRM
V_RRM = Rated
¾
¾
10
mA
t_rr
I_F = 20 mA, I_R = 1 mA
¾
¾
1.5
ms
V_fr
I_F = 100 mA, t_r = 100 ns, t_w = 5 ms
¾
¾
10
V
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
1
2002-01-23