S-AV10L Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – VHF RF Power Amplifier Module

S-AV10L,S-AV10H
TOSHIBA RF Power Amplifier Module
S-AV10L,S-AV10H
VHF RF Power Amplifier Module
· High gain: Po ≥ 14 W, Gp ≥ 1.85dB, ηT ≥ 40%
· S-AV10L 135~155 MHz
· S-AV10H 150~175 MHz
Maximum Ratings (Tc = 25°C)
Characteristics
DC supply voltage
DC supply voltage
Input power
Operating case temperature range
Storage temperature range
Symbol
V_CC
V_CON
Pi
T_{c (opr)}
T_stg
Rating
Unit
16
V
16
V
300
mW
-30~100
°C
-40~110
°C
Unit: mm
Electrical Characteristics (Tc = 25°C)
Characteristics
Frequency range
Output power
Power gain
Total efficiency
Input VSWR
Harmonics
Load mismatch
Power slump
Stability
Symbol
f_range
Po
G_P
h_T
VSWR_in
HRM
¾
¾
¾
Test Condition
¾
Pi = 200 mW
V_CC = 12.5 V, V_CON = 12.5 V
Z_G = Z_L = 50 W
V_CC = 15 V, V_CON = 12.5 V
Po = 15 W (Pi = adjust)
VSWR load 20: 1 all phase
Tc = -30~80°C
V_CC = 12.5 V, Pi = 200 mW
Po = 14 W (@Tc = 25°C)
V_CC = 12.5 V, Pi = 200 mW
V_CON = 0~12.5 V
VSWR Load 3: 1 all phase
JEDEC
―
JEITA
―
TOSHIBA
5-53P
Weight: 35 g (typ.)
Min Typ. Max Unit
135
¾
175 MHz
14
¾
¾
W
18.5 ¾
¾
dB
40
¾
¾
%
¾
¾
2
¾
¾
¾
-25
dB
No degradation
¾
¾
0.8
¾
dB
All spurious output than
60dB below desired
¾
signal
1
2003-03-27