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S-AU82AH Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL UHF RADIO APPLICATIONS
TOSHIBA RF POWER AMPLIFIER MODULE
S-AU82AH
S-AU82AH
FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL UHF RADIO APPLICATIONS
ï½¥Power Gain: 30.7 dB (Min.)
ï½¥Total Efficiency: 40% (Min.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 15 A, ZG = ZL = 50Ω)
CHARACTERISTICS
SYMBOL
TEST CONDITION
RATING
UNIT
Maximum Current
IT
15
A
Power Supply Voltage
VDD VGG = 0 V (GND), RF: none
16.5
V
Control Voltage
VGG 10.5 ≤ VDD ≤ 16.5 V, Pi = 50 mW
5.5
V
Instantaneous Output Power
Pomax
VGG ≤ 5.5 V, Pi = 50 mW, 10.5 ≤ VDD ≤
16.5V, within 2 seconds
80
W
Input Power
Operating Case Temperature
Pi
10.5 ≤ VDD ≤ 16.5 V, VGG ≤ 5.5 V
100
mW
Tc (opr)
10.5 ≤ VDD ≤ 16.5 V, VGG ≤ 5.5 V, Pi = 50
mW (Note 2)
-30 to 100
°C
Storage Temperature
Tstg
-40 to 110
°C
Note 1: The maximum ratings are the limits that must not be exceeded even for an instant, under worst possible
conditions. Exceeding the ratings may cause device damage, ignition, or deterioration. Therefore, when
designing the circuitry, derating factors should be applied so that the absolute maximum ratings are not
exceeded.
Note 2: The output power rating satisfies the range shown in Figures 1 and 2 according to the operating case
temperature. Ensure that the device should be operated within the specified operating range. The figures below
indicate the output power obtained 2 seconds after Po is generated.
Pomax-Tc
PDmax-Tc
70
60
50
40
30
20
10
0
-30 -20 -10 0
10 20 30 40 50 60 70 80 90 100
Tc (℃)
180
160
140
120
100
80
60
40 Power dissipation (PD)
20 PD = (VDD × IDD) – Po + Pi
0
-30 -20 -10 0
10 20 30 40 50 60 70 80 90 100
Tc(℃)
Figure.1 Pomax-Tc
Figure.2 PDmax-Tc
*When the device is used at Tc =100°C, the output power rating is 60 W as shown in Figure 1. When the power
dissipation at Tc = 100°C exceeds the rating shown in Figure 2, the output derating is required to limit the dissipation
within the specified range.
Note 3: The case temperature is monitored using the screw terminal blocks on the input side that are used for the
module implementation.
Note 4: To protect a device from being permanently damaged, the power-on sequence must be as follows (, while the
reversed order should be applied when turning off): 1. VDD, 2. Pi, 3. VGG
1
2007-06-21