S-AU27AL Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – 25W FM RF POWER AMPLIFIER MODULE

S−AU27AL,S−AU27AM,S−AU27AH
TOSHIBA RF POWER AMPLIFIER MODULE
S−AU27AL,S−AU27AM,S−AU27AH
25W FM RF POWER AMPLIFIER MODULE
l S-AU27AL
l S-AU27AM
l S-AU27AH
: f = 400~430MHz
: f = 450~490MHz
: f = 490~512MHz
Unit in mm
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
DC Supply Voltage
DC Supply Voltage
DC Supply Voltage
Total current
Input Power
Output Power
Operating Case Temperature Range
Storage Temperature Range
SYMBOL
V_CC1
V_CC2
V_CC3
I_T
P_i
P_o
T_{c (opr)}
T_stg
RATING
16
17
17
10
600
40
−30~100
−40~110
UNIT
V
V
V
A
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 35g
—
—
5−53Q
CHARACTERISTIC
Frequency Range
Output Power
Power Gain
Total Efficiency
Input VSWR
Harmonics
Load Mismatch
Stability
SYMBOL
TEST CONDITION
f_range
Po
G_p
η_T
VSWRin
HRM
—
—
―
V_CC1 = V_CC2 = V_CC3 = 12.5V
Pi = 200mW
Z_G = Z_L= 50Ω
Po = 35W (V_CC1 = adjust)
V_CC2 = V_CC3 = 15V
Pi = 200mW
VSWR load 20: 1 all phase
V_CC2 = V_CC3 = 12.5V
V_CC1 = 3~12.5V
Pi = 200mW
VSWR load 3: 1 all phase
MIN. TYP. MAX. UNIT
400
—
512 MHz
32
—
—
W
22.0 —
—
dB
35
—
—
%
—
1.5
2.5
—
—
−30 −25
dB
No Degradation
―
All spurious output than
60dB below desired
―
signal
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
2001-02-02 1/3