RSF05G1-1P Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – LOW POWER SWITCHING AND CONTROL APPLICATIONS

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P
TOSHIBA THYRISITOR SILICON PLANAR TYPE
RSF05G1−1P,RSF05G1−3P,RSF05G1−5P
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400V
Repetitive Peak Reverse Voltage : VRRM = 400V
l Average On−State Current
: IT (AV) = 500mA
l Plastic Mold Type
l Reduce a Quantity of Parts and Manufacturing
Process Because of Built-in RGK : RGK = 1kΩ, 2.7kΩ, 5.1kΩ
(Typical)
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
RSF05G1−1P
Off−State Voltage and
Repetitive Peak
RSF05G1−3P
Reverse Voltage
RSF05G1−5P
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<
5ms, Tj = 0~125°C)
RSF05G1−1P
RSF05G1−3P
RSF05G1−5P
Average On−State Current
(Half Sine Waveform)
R.M.S. On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature
V_DRM
V_RRM
V_DSM
I_T(AV)
I_T(RMS)
I_TSM
I²t
di / dt
P_GM
P_G(AV)
V_FGM
V_RGM
I_GM
T_j
T_stg
400
400
400
500
500
500
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
−5
125
−40~125
−40~125
V
V
mA
mA
A
A²s
A / µs
W
W
V
V
mA
°C
°C
Note: di / dt Test Condition, i_G = 5mA, t_gw = 10µs, t_gr ≤ 250ns
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1A
EQUIVALENT CIRCUIT
1
2001-07-10