RN6006 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5006
Equivalent Circuit
RN6006
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
V_CBO
−10
Collector-emitter voltage
V_CEO
−10
Emitter-base voltage
V_EBO
−6
Collector current
DC
I_C
−2
Pulse (Note1)
I_CP
−4
Base current
I_B
−0.4
Collector power dissipation
P_C
500
Collector power dissipation
P_C *
1000
Junction temperature
T_j
150
Storage temperature range
T_stg
−55~150
Note: Pulse width =< 10ms, duty cycle ^<= 30 %
* : Mounterd on ceramic substrate (250mm² ´ 0.8t)
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
―
SC-62
2-5K1A
Marking
Unit
V
V
V
A
A
mW
mW
°C
°C
1
2001-10-29