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RN6002 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Motor Drive Circuit Applications / Power Amplifier Applications / Power Switching Applications | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6002
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5002
Equivalent Circuit
RN6002
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
â
SC-62
2-5K1A
Maximum Ratings (Ta = 25°C)
Marking
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
â30
V
Collector-emitter voltage
VCEO
â30
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â2
A
Base current
IB
â0.4
A
Collector power dissipation
PC
500
mW
Collector power dissipation
PC *
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
â55~150
°C
* : Mounterd on ceramic substrate (250mm2 Ã 0.8t)
1
2001-10-29
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