RN6001 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6001
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5001
Equivalent Circuit
RN6001
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
―
SC-62
2-5K1A
Maximum Ratings (Ta = 25°C)
Marking
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−30
V
Collector-emitter voltage
V_CEO
−30
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−2
A
Base current
I_B
−0.4
A
Collector power dissipation
P_C
500
mW
Collector power dissipation
P_C *
1000
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
* : Mounterd on ceramic substrate (250mm² × 0.8t)
1
2001-10-29