RN5006 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN6006
Equivalent Circuit
RN5006
Unit: mm
Maximum Ratings (Ta = 25°C)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05g (typ.)
Marking
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
10
V
Collector-emitter voltage
V_CEO
10
V
Emitter-base voltage
V_EBO
6
V
Collector current
DC
I_C
Pulse (Note1)
I_CP
2
A
4
Base current
I_B
0.4
A
Collector power dissipation
P_C
500
mW
Collector power dissipation
P_C *
1000
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Pulse width =< 10ms, duty cycle ^<= 30 %
* : Mounterd on ceramic substrate (250mm² × 0.8t)
1
2001-10-29