RN49P1FS Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Preliminary
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT Process) (Transistor with Built-in Bias Resistor)
RN49P1FS
RN49P1FS
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
• Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly costs.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
C
R1
B
C
R1
B
E
E
Q1
R1: 10 kΩ, R2: 10 kΩ
Q2
R1: 10 kΩ
Q1: RN1102FS
Q2: RN2111FS
1. EMITTER1
(E1)
2. EMITTER2
(E2)
3. BASE2
(B2)
4. COLLECTOR2 (C2)
5. BASE1
(B1)
6. COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.001 g (typ.)
Marking
Equivalent Circuit (top view)
6 54
X0
123
65 4
Q2
Q1
123
1
2007-11-01