RN49A5 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN49A5
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN49A5
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
• Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
• Diverse resistance values are available suited to a range of different
circuit designs.
Equivalent Circuit and Bias Resister Values
Unit: mm
Q1
R1: 10 kΩ, R2 : 47 kΩ
Q2
R1: 2.2 kΩ, R2: 10 kΩ
Q1: RN1107F Equivalent
Q2: RN2327A Equivalent
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
50
50
6
100
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
−15
−12
−6
−500
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8 mg (typ.)
Unit
V
V
V
mA
Unit
V
V
V
mA
1
2007-11-01