RN49A4FE Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type
(PCT Process) (Transistor with Built-in Bias Resistor)
RN49A4FE
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
RN49A4FE
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly costs.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
R1
B
C
R1
B
E
E
Q1
R1: 22 kΩ
Q2
R1: 4.7 kΩ
Q1: RN2112F equivalent
Q2: RN1970HFE equivalent
Marking
1.EMITTER1
(E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2
(E2)
5.BASE2
(B2)
6.COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 0.003 g (typ.)
Equivalent Circuit (top view)
654
654
55
Q1
Q2
123
123
1
2007-11-01