RN4990AFS Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type
(PCT Process) (Transistor with Built-in Bias Resistor)
RN4990AFS
RN4990AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
C
R1
B
R1
B
E
E
R1: 4.7 kΩ
(Q1, Q2 common)
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
1. EMIITTER1 (E1)
2. BASE1
(B1)
3. COLLECTOR2 (C2)
4. EMITTER2 (E2)
5. BASE2
(B2)
fS6 ^{6. COLLECTOR1 (C1)}
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit (top view)
Marking
654
Type name
Q1
Q2
V9
123
1
2007-11-01