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RN4990 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) | |||
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RN4990
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4990
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Includeing two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
5
100
Rating
â50
â50
â5
â100
JEDEC
Unit
EIAJ
V
TOSHIBA
Weight: 6.8mg
V
V
mA
â
â
2-2J1A
Unit
V
V
V
mA
1
2001-06-07
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