RN4987AFS Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type
(PCT Process) (Transistor with Built-in Bias Resistor)
RN4987AFS
RN4987AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
C
R1
B
R1
B
E
E
R1: 10 kΩ
R2: 47 kΩ
(Q1, Q2 common)
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
1. EMITTER1 (E1)
2. BASE1
(B1)
3. COLLECTOR2 (C2)
4. EMITTER2 (E2)
5. BASE2
(B2)
fS6 ^{6. COLLECTOR1 (C1)}
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit (top view)
654
Marking
Type name
Q1
Q2
V6
123
1
2007-11-01