RN4986 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN4986
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4986
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Includeing two devices in US6 (ullta super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
50
50
5
100
Rating
−50
−50
−5
−100
Unit
JEDEC
EIAJ
V
TOSHIBA
V
Weight: 6.8mg
V
mA
―
―
2-2J1A
Unit
V
V
V
mA
1
2001-06-07