RN4910 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4910
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4910
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Includeing two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
−50
−50
−5
−100
Rating
50
50
5
100
JEDEC
Unit
EIAJ
TOSHIBA
V
Weight: 6.8mg
V
V
mA
―
―
2-2J1A
Unit
V
V
V
mA
1
2001-06-07