RN47A7JE Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN47A7JE
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
RN47A7JE
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
R1
B
C
R1
B
E
Q1 R1: 10 kΩ, R2: 10 kΩ
E
Q2: R1: 4.7 kΩ, R2: 10 kΩ
1.EMITTER1 (E1)
2.BASE1
(B1)
3.EMITTER2 (E2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
BASE2
(B2)
JEDEC
―
JEITA
―
TOSHIBA
2-2P1E
Weight: 3 mg (typ.)
Marking
Equivalent Circuit (top view)
1
2009-04-23