RN47A3JE Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT Process) (Bias Resistor Built-in Transistor)
RN47A3JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
RN47A3JE
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (5-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
C
R1
B
R1
B
E
E
R1: 10 kΩ (Q1, Q2 common)
R2: 10 kΩ (Q1, Q2 common)
Q1: RN1102F
Q2: RN2102F
1.EMITTER1
(E1)
2.BASE1
(B1)
3.EMITTER2
(E2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
BASE2
(B2)
JEDEC
―
JEITA
―
TOSHIBA
2-2P1E
Weight: 0.003g (typ.)
Marking
Equivalent Circuit (top view)
5
4
5
4
Q2
23
Q1
123
123
1
2007-11-01