RN47A1JE Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT Process) (Bias Resistor Built-in Transistor)
RN47A1JE
RN47A1JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (5 pin)
• package.
• Incorporating a bias resistor into a transistor reduces parts count.
• Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Unit: mm
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
C
R1
B
R1
B
E
E
R1: 4.7 kΩ (Q1, Q2 common)
Q1: RN1110F
Q2: RN2110F
1.EMITTER1
(E1)
2.BASE1
(B1)
3.EMITTER2
(E2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
BASE2
(B2)
JEDEC
―
JEITA
―
TOSHIBA
2-2P1E
Weight: 0.003g (typ.)
Marking
Equivalent Circuit (top view)
5
4
5
4
21
123
Q2
Q1
123
1
2007-11-01