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RN4611 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) | |||
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RN4611
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4611
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
z Including two devices in SM6 (super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
Equivalent Circuit
R1: 10kâ¦
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
â50
â50
â5
â100
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
5
100
JEDEC
Unit
EIAJ
V
TOSHIBA
V
Weight: 0.015g
V
mA
â
â
2-3N1A
Unit
V
V
V
mA
1
2007-11-01
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