RN4606_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4606
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4606
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
z Including two devices in SM6 (super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
−50
−50
−5
−100
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
50
50
5
100
JEDEC
Unit
EIAJ
TOSHIBA
V
Weight: 0.015g
V
V
mA
―
―
2-3N1A
Unit
V
V
V
mA
1
2007-11-01