|
RN4604_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) | |||
|
RN4604
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4604
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
z Including two devices in SM6 (super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 47kâ¦
R2: 47kâ¦
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
â50
â50
â10
â100
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
10
100
JEDEC
Unit
EIAJ
TOSHIBA
V
Weight: 0.015g
V
V
mA
â
â
2-3N1A
Unit
V
V
V
mA
1
2007-11-01
|
▷ |