RN4601 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN4601
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4601
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Includeing two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
R2: 4.7kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
−50
−50
−10
−100
Rating
50
50
10
100
Unit
JEDEC
V
EIAJ
V
TOSHIBA
V
Weight: 0.015g
mA
―
―
2-3N1A
Unit
V
V
V
mA
1
2001-06-05