RN2972FS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2972FS,RN2973FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN2972FS,RN2973FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1972FS, RN1973FS
Equivalent Circuit and Bias Resistor Values
C
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
V_CBO
−20
V
V_CEO
−20
V
V_EBO
−5
V
I_C
−50
mA
P_C (Note 1)
50
mW
1.EMIITTER1 (E1)
2.EMITTER2 (E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
fS6 ^{6.COLLECTOR1 (C1)}
JEDEC
―
JEITA
―
TOSHIBA
2-1F1C
Weight: 0.001g (typ.)
Equivalent Circuit
(top view)
654
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Q1
Q2
123
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2972FS
RN2973FS
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
C_ob
Test Condition
V_CB = −20 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −5 V, I_C = −1 mA
I_C = −5 mA, I_B = −0.25 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
R1
⎯
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
300 ⎯
⎯
⎯
−0.15 V
⎯
1.2
⎯
pF
17.6 22 26.4
kΩ
37.6 47 56.4
1
2007-11-01