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RN2972CT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |||
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RN2972CT, RN2973CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2972CT, RN2973CT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
⢠Two devices are incorporated into a fine pitch Small Mold (6pin)
package.
⢠Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
⢠Complementary to RN1972CT and RN1973CT
Equivalent Circuit
1.0±0.05
0.15±0.03
Unit: mm
ï¼
ï¼
ï¼
ï¼
ï¼
ï¼
0.35±0.02 0.35±0.02
0.7±0.03
0.075±0.03
C
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
Unit
â20
V
â20
V
â5
V
â50
mA
50
mW
150
°C
â55 to150
°C
CST6
1.EMIITTER1
(E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
6.COLLECTOR1 (C1)
JEDEC
â
JEITA
â
TOSHIBA
2-1K1A
Weight: 1.0 mg (typ.)
Equivalent Circuit
(top view)
654
Q1
Q2
123
Note *: Total rating
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-05-21
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