RN2970CT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2970CT,RN2971CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2970CT,RN2971CT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN1970CT and RN1971CT
Equivalent Circuit and Bias Resistor Values
1.0±0.05
0.15±0.03
Unit: mm
６
５
４
１
２
３
0.35±0.02 0.35±0.02
0.7±0.03
0.075±0.03
C
R1
B
Type No.
RN2970CT
RN2971CT
R1 (kΩ)
4.7
10
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
−20
V
−20
V
−5
V
−50
mA
50
mW
150
°C
−55~150
°C
CST6
1.EMIITTER1 (E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
6.COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1K1A
Weight: 1.0 mg (typ.)
Equivalent Circuit
(top view)
654
Q1
Q2
123
Note *: TOTAL
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-05-27