RN2967FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2967FE~RN2969FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2967FE,RN2968FE,RN2969FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1967FE~RN1969FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
Type No.
RN2967FE
RN2968FE
RN2969FE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
RN2967FE
−6
Emitter-base voltage RN2968FE
V_EBO
−7
V
RN2969FE
−15
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I_C
−100
mA
P_C (Note 1)
100
mW
T_j
150
°C
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Equivalent Circuit
(top view)
654
Q1
Q2
123
1
2011-01-19