RN2967 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2967~RN2969
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2967,RN2968,RN2969
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z Including two devices in US6 (ultra super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1967~RN1969
Equivalent Circuit and Bias Resistor Values
Type No.
RN2967
RN2968
RN2969
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
―
JEITA
―
TOSHIBA
2-2J1B
Weight: 6.8mg (typ.)
Equivalent Circuit (Top View)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2967~2969
RN2967
RN2968
RN2969
RN2967~2969
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
−50
V
−50
V
−6
−7
V
−15
−100
mA
200
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Total rating
1
2007-11-01