RN2961FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2961FE~RN2966FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2961FE,RN2962FE,RN2963FE
RN2964FE,RN2965FE,RN2966FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1961FE~RN1966FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 0.003 g (typ.)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2961FE~2966FE
RN2961FE~2964FE
RN2965FE, 2966FE
RN2961FE~2966FE
Note: Total rating
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C (Note)
T_j
T_stg
Rating
−50
−50
−10
−5
−100
100
150
−55~150
Equivalent Circuit
(top view)
Unit
654
V
V
Q1
Q2
V
mA
123
mW
°C
°C
1
2004-07-01