RN2961CT Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2961CT~RN2966CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2961CT,RN2962CT,RN2963CT
RN2964CT,RN2965CT,RN2966CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
0.15±0.03
６
５
４
Unit: mm
• Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count, which
enables the manufacture of ever more compact equipment and saves
assembly cost.
• Complementary to RN1961CT to RN1966CT
１
２
３
0.35±0.02 0.35±0.02
0.7±0.03
0.075±0.03
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2961CT
RN2962CT
RN2963CT
RN2964CT
RN2965CT
RN2966CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
1.EMIITTER1 (E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
CST6 6.COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1K1A
Weight: 1.0 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2961CT to 2966CT
RN2961CT to 2964CT
RN2965CT, 2966CT
RN2961CT to 2966CT
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C (Note1)
T_j
T_stg
Rating
−20
−20
−10
−5
−50
140
150
−55 to 150
Equivalent Circuit
(top view)
Unit
654
V
V
Q1
Q2
V
123
mA
mW
°C
°C
Note1: Total rating, mounted on glass-epoxy board of 10mm×10mm×1mmt.
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-17