RN2961 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2961~RN2966
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2961,RN2962,RN2963,RN2964,RN2965,RN2966
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1961~RN1966
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2961
4.7
RN2962
10
RN2963
22
RN2964
47
RN2965
2.2
RN2966
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1B
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2961~2966
RN2961~2964
RN2965, 2966
Symbol
V_CBO
V_CEO
I_C
P_C *
T_j
T_stg
Equivalent Circuit (Top View)
Rating
Unit
−50
V
−50
V
−10
−5
−100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07