RN2912AFS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2912AFS, RN2913AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2912AFS, RN2913AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
• Complementary to the RN1912AFS/RN1913AFS
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V_CBO
V_CEO
V_EBO
Rating
Unit
−50
V
−50
V
−5
V
1. EMITTER1
(E1)
2. BASE1
(B1)
3. COLLECTOR2 ^(C2)
4. EMITTER2
(E2)
5. BASE2
(B2)
fS6 ^{6. COLLECTOR1 (C1)}
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit (top view)
654
Collector current
I_C
−80
mA
Collector power dissipation
Junction temperature
P_C (Note 1)
50
mW
T_j
150
°C
Q1
Q2
Storage temperature range
T_stg
−55~150
°C
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2912AFS
RN2913AFS
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
C_ob
Test Condition
V_CB = −50 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −5 V, I_C = −1 mA
I_C = −5 mA, I_B = −0.25 mA
V_CB = −10 V, I_E = 0,
f = 1 MHz
R1
⎯
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
120
⎯
400
⎯
⎯ −0.15 V
⎯
0.9
⎯
pF
17.6 22 26.4
kΩ
37.6 47 56.4
1
2007-11-01