RN2910 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2910,RN2911
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2910,RN2911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1910, RN1911
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
−50
V
−50
V
−5
V
−100
mA
200
mW
150
°C
−55~150
°C
Equivalent Circuit (Top View)
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
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2-2J1A
1
2001-06-07