RN2907FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2907FE~RN2909FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2907FE,RN2908FE,RN2909FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
• Complementary to RN1907FE~RN1909FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
Type No.
RN2907FE
RN2908FE
RN2909FE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
E
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 0.003 g (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
RN2907FE~
V_CBO
−50
V
Collector-emitter voltage
RN2909FE
V_CEO
−50
V
RN2907FE
−6
Emitter-base voltage
RN2908FE
V_EBO
−7
V
RN2909FE
−15
Collector current
I_C
−100
mA
Collector power dissipation _RN2907FE~ P_C (Note 1)
100
mW
Junction temperature
RN2909FE
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Equivalent Circuit
(top view)
654
Q1
Q2
123
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01