RN2905 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2901~RN2906
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2901,RN2902,RN2903,RN2904,RN2905,RN2906
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1901~RN1906
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2901
4.7
RN2902
10
RN2903
22
RN2904
47
RN2905
2.2
RN2906
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Equivalent Circuit (Top View)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2901~2906
RN2901~2904
RN2905, 2906
RN2901~2906
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C *
T_j
T_stg
Rating
Unit
−50
V
−50
V
−10
V
−5
−100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-05