RN2901FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2901FE~RN2906FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2901FE,RN2902FE,RN2903FE
RN2904FE,RN2905FE,RN2906FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1901FE~RN1906FE
Equivalent Circuit and Bias Resistor Values
C
Type No.
R1 (kΩ)
R2 (kΩ)
R1
B
RN2901FE
4.7
4.7
RN2902FE
10
10
RN2903FE
22
22
RN2904FE
47
47
E
RN2905FE
2.2
47
RN2906FE
4.7
47
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
RN2901FE~
V_CBO
−50
V
Collector-emitter voltage
RN2906FE
V_CEO
−50
V
Emitter-base voltage
RN2901FE~
RN2904FE
RN2905FE,
RN2906FE
V_EBO
−10
V
−5
Collector current
I_C
−100
mA
Collector power dissipation _RN2901FE~ P_C (Note 1) 100
mW
Junction temperature
RN2906FE
T_j
150
°C
Storage temperature range
T_stg
−55~150 °C
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight:0.003 g (typ.)
Equivalent Circuit
(top view)
654
Q1
Q2
123
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01