RN2712JE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2712JE,RN2713JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2712JE, RN2713JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit : mm
z Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
z Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
z A wide range of resistor values is available for use in various circuits.
Equivalent Circuit
1.BASE1
(B1)
2.EMITTER (E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
JEDEC
―
JEITA
―
TOSHIBA
2-2P1D
Unit
Weight: 0.003g(typ.)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C *
T_j
T_stg
−50
V
−50
V
−5
V
−100
mA
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Equivalent Circuit
(top view)
5
4
Q1
Q2
123
1
2007-11-01