RN2710JE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2710JE,RN2711JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2710JE, RN2711JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (5-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
• Reducing the parts count enables the manufacture of ever more
compact
equipment and lowers assembly cost.
• A wide range of resistor values are available for use in various circuit
designs.
• Complementary to RN1710JE, RN1711JE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−50
V
V_CEO
−50
V
V_EBO
−5
V
I_C
−100
mA
P_C (Note 1)
100
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
1.BASE1
(B1)
2.EMITTER (E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2P1D
Weight: 0.003g (typ.)
Equivalent Circuit
(top view)
5
4
Q1
Q2
123
2007-11-01