RN2707 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2707~RN2709
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2707,RN2708,RN2709
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in USV (ultra super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1707~RN1709
Equivalent Circuit and Bias Resistor Values
Type No.
RN2707
RN2708
RN2709
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg
―
―
2-2L1A
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2707~2709
RN2707
RN2708
RN2709
RN2707~2709
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
−50
−50
−6
−7
−15
−100
200
150
−55~150
Equivalent Circuit (Top View)
Unit
V
V
V
mA
mW
°C
°C
1
2001-06-07