RN2701JE Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2701JE~RN2706JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2701JE,RN2702JE,RN2703JE
RN2704JE,RN2705JE,RN2706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
· Complementary to RN1701JE~RN1706JE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2701JE
RN2702JE
RN2703JE
RN2704JE
RN2705JE
RN2706JE
R1 (kW)
4.7
10
22
47
2.2
4.7
R2 (kW)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol Rating
Unit
Collector-base voltage
RN2701JE~RN2706JE
V_CBO
-50
V
Collector-emitter voltage
V_CEO
-50
V
Emitter-base voltage
RN2701JE~RN2704JE
-10
V_EBO
V
RN2705JE, RN2706JE
-5
Collector current
I_C
-100
mA
Collector power dissipation
RN2701JE~RN2706JE
P_C
(Note)
100
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg -55~150
°C
Note: Total rating
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit
(top view)
5
4
Q1
Q2
123
1
2002-01-24