RN2701 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2701~RN2706
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2701,RN2702,RN2703,RN2704,RN2705,RN2706
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in USV (ultra super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1701~1706
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2701
4.7
RN2702
10
RN2703
22
RN2704
47
RN2705
2.2
RN2706
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg
―
―
2-2L1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2701~2706
RN2701~2704
RN2705, 2706
Symbol
V_CBO
V_CEO
I_C
P_C *
T_j
T_stg
Rating
Unit
−50
V
−50
V
−10
−5
−100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07