RN2607 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2607~RN2609
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1607~RN1609
Equivalent Circuit andBias Resistor Values
Type No.
RN2607
RN2608
RN2609
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN2607~RN2609
RN2607
RN2608
RN2609
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Eauivalent Circuit (Top View)
Rating
Unit
−50
V
−50
V
−6
−7
V
−15
−100
mA
300
mW
150
°C
−55~150
°C
1
2001-06-05