RN2601 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2601~RN2606
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2601,RN2602,RN2603
RN2604,RN2605,RN2606
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1601~1606
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN2601
4.7
4.7
RN2602
10
10
RN2603
22
22
RN2604
47
47
RN2605
2.2
47
RN2606
4.7
47
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN2601~2606
RN2601~2604
RN2605, 2606
RN2601~2606
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
−50
V
−50
V
−10
V
−5
−100
mA
300
mW
150
°C
−55~150
°C
1
2001-06-05