RN2511 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2510,RN2511
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2510,RN2511
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including twodevices in SMV (super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1510, RN1511
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Equivalent Circuit (Top View)
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Rating
Unit
−50
V
−50
V
−5
V
−100
mA
300
mW
150
°C
−55~150
°C
1
2001-06-07