RN2507 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2507~RN2509
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2507,RN2508,RN2509
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in SMV (super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1507~RN1509
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2507
10
RN2508
22
RN2509
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN2507~RN2509
RN2507
RN2508
RN2509
RN2507~RN2509
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Rating
Unit
−50
V
−50
V
−6
−7
V
−15
−100
mA
300
mW
150
°C
−55~150
°C
1
2001-06-05